QUANTITATIVE DEFECT MODEL FOR PHOSPHORUS IN SILICON FROM 450 DEGREES C TO 1200 DEGREES C

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dc.contributor.authorKENDALL, DL
dc.contributor.authorCARPIO, R
dc.date.accessioned2026-05-28T16:52:57Z
dc.date.issued1978
dc.description.paginacion470 -
dc.description.procedenciaEXT
dc.format.discursoResumen de reunión
dc.format.extent1
dc.identifier.issn0013-4651
dc.identifier.urihttps://ahcm.cinvestav.mx/handle/ahcm/29167
dc.language.isoInglés
dc.numero.secuencia29164
dc.publisherINST NACL ASTROFIS OPT & ELECT,PUEBLA,MEXICO
dc.relation.ispartofseriesVol. 125 No. 11
dc.source.revistafuenteJOURNAL OF THE ELECTROCHEMICAL SOCIETY
dc.subjectQUANTITATIVE DEFECT MODEL, PHOSPHORUS, SILICON, 450-DEGREES-C TO 1200-DEGREES-C
dc.subject.categoriaprincipalQUIMICA
dc.subject.disciplinaQUIMICA ANALITICA
dc.subject.subdisciplinaANALISIS ELECTROQUIMICO
dc.titleQUANTITATIVE DEFECT MODEL FOR PHOSPHORUS IN SILICON FROM 450 DEGREES C TO 1200 DEGREES C
dc.title.alternativeJ ELECTROCHEM SOC

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