QUANTITATIVE DEFECT MODEL FOR PHOSPHORUS IN SILICON FROM 450 DEGREES C TO 1200 DEGREES C

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1978

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INST NACL ASTROFIS OPT & ELECT,PUEBLA,MEXICO

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QUANTITATIVE DEFECT MODEL, PHOSPHORUS, SILICON, 450-DEGREES-C TO 1200-DEGREES-C

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https://ahcm.cinvestav.mx/handle/ahcm/29167

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