VERTICAL ETCHING OF SILICON AT VERY HIGH ASPECT RATIOS

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dc.contributor.authorKENDALL, DL
dc.date.accessioned2026-05-28T16:38:41Z
dc.date.issued1974
dc.description.paginacion373 - 403
dc.description.procedenciaEXT
dc.format.discursoRevisión
dc.format.extent31
dc.identifier.issn0084-6600
dc.identifier.urihttps://ahcm.cinvestav.mx/handle/ahcm/25437
dc.language.isoInglés
dc.numero.secuencia25434
dc.publisherTEXAS INSTRUMENTS INC,DALLAS,TX 75222
dc.relation.ispartofseriesVol. 9
dc.source.revistafuenteANNUAL REVIEW OF MATERIALS SCIENCE
dc.subjectVERTICAL ETCHING, SILICON, VERY HIGH ASPECT RATIOS
dc.subject.categoriaprincipalMULDISCIPLINARIA
dc.subject.disciplinaTECNOLOGIA ELECTRONICA
dc.subject.subdisciplinaMICROELECTRONICA. TECNOLOGIA DEL SILICIO
dc.titleVERTICAL ETCHING OF SILICON AT VERY HIGH ASPECT RATIOS
dc.title.alternativeANNU REV MATER SCI

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