INCREASE OF INVERSE BETA OF SI TRANSISTORS DUE TO LOW TEMPERATURE TREATMENTS

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dc.contributor.authorKENDALL, DL
dc.contributor.authorACEVES, M
dc.date.accessioned2026-05-28T16:57:03Z
dc.date.issued1979
dc.description.paginacion282 - 283
dc.description.procedenciaEXT
dc.format.discursoArtículo
dc.format.extent2
dc.identifier.issn0013-5194
dc.identifier.urihttps://ahcm.cinvestav.mx/handle/ahcm/30586
dc.language.isoInglés
dc.numero.secuencia30583
dc.relation.ispartofseriesVol. 15 No. 10
dc.source.revistafuenteELECTRONICS LETTERS
dc.subjectINCREASE, INVERSE BETA, SI TRANSISTORS, LOWTEMPERATURE TREATMENTS
dc.subject.categoriaprincipalCIENCIAS TECNOLOGICAS
dc.subject.disciplinaTECNOLOGIA ELECTRONICA
dc.titleINCREASE OF INVERSE BETA OF SI TRANSISTORS DUE TO LOW TEMPERATURE TREATMENTS
dc.title.alternativeELECTRON LETT

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