IMPROVED THEORETICAL PREDICTIONS FOR STEAM OXIDATION OF SILICON AT ANY ELEVATION

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dc.contributor.authorKENDALL L, DON
dc.contributor.authorGARCIA C, M
dc.contributor.authorACEVES, M
dc.date.accessioned2026-05-28T16:52:57Z
dc.date.issued1978
dc.description.paginacion1514 - 1517
dc.description.procedenciaEXT
dc.format.discursoArtículo
dc.format.extent4
dc.identifier.issn0013-4651
dc.identifier.urihttps://ahcm.cinvestav.mx/handle/ahcm/29165
dc.language.isoInglés
dc.numero.secuencia29162
dc.publisherINST NACL ASTROFIS OPT & ELECTRON,PUEBLA,MEXICO
dc.relation.ispartofseriesVol. 125 No. 9
dc.source.revistafuenteJOURNAL OF THE ELECTROCHEMICAL SOCIETY
dc.subjectIMPROVED THEORETICAL PREDICTIONS, STEAM OXIDATION, SILICON, ANY ELEVATION
dc.subject.categoriaprincipalQUIMICA
dc.subject.disciplinaQUIMICA ANALITICA
dc.subject.subdisciplinaANALISIS ELECTROQUIMICO
dc.titleIMPROVED THEORETICAL PREDICTIONS FOR STEAM OXIDATION OF SILICON AT ANY ELEVATION
dc.title.alternativeJ ELECTROCHEM SOC

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