MOBILITY OF VERY PURE SEMICONDUCTORS AT VERY LOWTEMPERATURES

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dc.contributor.authorKO
dc.contributor.authorFUJITA
dc.contributor.authorCHI
dc.date.accessioned2026-05-28T15:49:58Z
dc.date.issued1958
dc.description.paginacion227 - 233
dc.description.procedenciaEXT
dc.format.discursoArtículo
dc.format.extent7
dc.identifier.issn0022-3697
dc.identifier.urihttps://ahcm.cinvestav.mx/handle/ahcm/19259
dc.language.isoInglés
dc.numero.secuencia19256
dc.publisherUNIV AUTONOMA METROPOLITANA IZTAPALAPA,DEPT FIS & QUIM,MEXICO CITY 13,MEXICO
dc.publisherSTATE UNIV NEW YORK,DEPT PHYS & ASTRON,BUFFALO,NY 14214
dc.relation.ispartofseriesVol. 37 No. 2
dc.source.revistafuenteJOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
dc.subjectMOBILITY, PURE SEMICONDUCTORS, LOW TEMPERATURES
dc.subject.categoriaprincipalQUIMICA
dc.subject.disciplinaQUIMICA FISICA
dc.subject.subdisciplinaCINETICA QUIMICA
dc.titleMOBILITY OF VERY PURE SEMICONDUCTORS AT VERY LOWTEMPERATURES
dc.title.alternativeJ AM PHARM ASSOC

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